MOS measurement of oxygen recoils from As implantation into silicon dioxide

✍ Scribed by Goetzberger, A.; Bartelink, D. J.; McVittie, J. P.; Gibbons, J. F.

• Book ID: 111933238
• Publisher: American Institute of Physics
• Year: 1976
• Tongue: English
• Weight: 476 KB
• Volume: 29
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.89037