## Abstract The 3‐dimensional morphology of individual pores grown in InP(001) by electrochemical etching, their interface polarities and their branching behavior have been investigated by transmission electron microscopy (TEM) in various crystal lattice projections and by convergent‐beam electron
Morphology, interface polarity and branching of electrochemically etched pores in InP
✍ Scribed by E. Spiecker; M. Rudel; W. Jäger; M. Leisner; H. Föll
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 158 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The present issue of physica status solidi (a), guest‐edited by Martin Albrecht, has been assembled in honour of Professor Horst P. Strunk, Erlangen, on the occasion of his 65th birthday.
The cover picture illustrates the morphology of pores after electrochemical etching of indium phosphide by bright‐field transmission electron micrographs (TEM) under various crystal projections: The upper figures show pore tips imaged in a 〈110〉 projection with pronounced {111}A facets (left image) and short {001} facets edge‐on (right image). The lower left figure contains a pore tip (top right) ending in the TEM specimen and a pore intersecting the specimen, imaged along the 〈111〉 pore axis. Inclined pores in a [001] plan‐view sample imaged under tilted geometry (∼35° tilt) along a 〈112〉 direction are visible in the lower right figure.
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## Abstract In this paper we report on galvanostatic pore formation on both n‐InP and n‐GaAs in acidic liquid ammonia (223 K). Quantitative analyses by atomic absorption have revealed two different dissolution mechanisms (involving 6 or 8 holes) without secondary reaction. Electrochemical behaviour