New porosification of n-InP and n-GaAs in acidic liquid ammonia at 223 K: unusual morphologies associated to distinguished electrochemical behaviours
✍ Scribed by Gonçalves, Anne-Marie ;Santinacci, Lionel ;Eb, Alexandra ;David, Caroline ;Mathieu, Charles ;Herlem, Michel ;Etcheberry, Arnaud
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 389 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
In this paper we report on galvanostatic pore formation on both n‐InP and n‐GaAs in acidic liquid ammonia (223 K). Quantitative analyses by atomic absorption have revealed two different dissolution mechanisms (involving 6 or 8 holes) without secondary reaction. Electrochemical behaviours have also shown diverse evolutions. Potential oscillations were observed onto InP while a constant voltage is measured for GaAs. Distinguished pore morphologies observed by scanning electron microscopy have confirmed the different porosification processes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)