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Morphology and electronic transport of polycrystalline silicon films deposited by SiF[sub 4]/H[sub 2] at a substrate temperature of 200 °C

✍ Scribed by Hazra, Sukti; Mukhopadhyay, Sumita; Ray, Swati


Book ID
121687205
Publisher
AVS (American Vacuum Society)
Year
2002
Tongue
English
Weight
415 KB
Volume
20
Category
Article
ISSN
0734-2101

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