Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H[sub 2]–SiH[sub 4] plasma

✍ Scribed by Kessels, W. M. M.; Severens, R. J.; Smets, A. H. M.; Korevaar, B. A.; Adriaenssens, G. J.; Schram, D. C.; van de Sanden, M. C. M.

• Book ID: 121363875
• Publisher: American Institute of Physics
• Year: 2001
• Tongue: English
• Weight: 310 KB
• Volume: 89
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1338985