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Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures

✍ Scribed by T. M. Burbaev; V. A. Kurbatov; M. M. Rzaev; A. O. Pogosov; N. N. Sibel’din; V. A. Tsvetkov; H. Lichtenberger; F. Schäffler; J. P. Leitao; N. A. Sobolev; M. C. Carmo


Book ID
110140952
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
123 KB
Volume
47
Category
Article
ISSN
1063-7834

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