Multilayers of Ge were deposited on (0 0 1) Si at low temperatures (250 and 300 C). The structural characterization was done by X-ray diffraction and reflectivity as well as by atomic force microscopy technics. The photoluminescence (PL) spectra reveal a quantum well (QW) emission that shifts to low
✦ LIBER ✦
Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures
✍ Scribed by T. M. Burbaev; V. A. Kurbatov; A. O. Pogosov; M. M. Rzaev; N. N. Sibel’din; V. A. Tsvetkov
- Book ID
- 110137600
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2004
- Tongue
- English
- Weight
- 122 KB
- Volume
- 46
- Category
- Article
- ISSN
- 1063-7834
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