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Monte Carlo simulations of hole transport in SiGe and Ge quantum wells

✍ Scribed by Crow, G C; Abram, R A


Book ID
120817687
Publisher
Institute of Physics
Year
1999
Tongue
English
Weight
322 KB
Volume
15
Category
Article
ISSN
0268-1242

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We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra-and intersubband carriercarrier scattering a