Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

✍ Scribed by S.M. Goodnick; P. Lugli

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 247 KB
• Volume: 5
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(89)90385-6

✦ Synopsis

We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation.

In the present work we model a single quantum well electron system with the inclusion of intra-and intersubband carriercarrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.

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