𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Monte Carlo simulations of Ge segregation in strained Si and SiGe alloys

✍ Scribed by MatsI. Larsson; GöranV. Hansson

Publisher
Elsevier Science
Year
1993
Weight
77 KB
Volume
291
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A semiempirical surface scattering model
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
✍ A.T. Pham; C. Jungemann; C.D. Nguyen; B. Meinerzhagen 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 781 KB

A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO 2 interface, where the quantum correction is based on the impr

Grain boundary segregation in low Cr Fe–
Grain boundary segregation in low Cr Fe–Cr alloys: The effect of radiation induced vacancies studied by metropolis Monte Carlo simulations
✍ E.E. Zhurkin; M. Hou; J. Kuriplach; T. Ossowski; A. Kiejna 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 827 KB

Radiation damage may modify the segregation state and phase separation conditions in Fe-Cr alloys with compositions and temperatures of technological interest. We use Metropolis Monte Carlo simulations to study segregation effects at the best stable variant of the R = 5 (2 1 0) grain boundary, in th