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Monte Carlo calculation of one- and two-dimensional particle and damage distributions for ion-implanted dopants in silicon

โœ Scribed by Albers, J.


Book ID
114595289
Publisher
IEEE
Year
1985
Tongue
English
Weight
964 KB
Volume
32
Category
Article
ISSN
0018-9383

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Monte-Carlo simulations of ion track in
โœ T. Colladant; A. Lโ€™Hoir; J.E. Sauvestre; O. Flament ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 585 KB

High energy interaction of heavy ions with silicon integrated circuits contribute to transient events or single event effects (SEE) when ionizing the device along the particle path. Knowledge of the electron-hole pair density in the ion track is necessary for studying collected charge and estimating