Monolithic pixel detectors in a deep submicron SOI process
β Scribed by Grzegorz Deptuch
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 760 KB
- Volume
- 623
- Category
- Article
- ISSN
- 0168-9002
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β¦ Synopsis
A compact charge-signal processing chain, composed of a two-stage semi-Gaussian preamplifier-signal shaping filter, a discriminator and a binary counter, implemented in a prototype pixel detector using 0.20 mm CMOS silicon-on-insulator process, is presented. The gain of the analog chain was measured 0.76 V/fC at the signal peaking time about 300 ns and the equivalent noise charge referred to the input of 80 e Γ .
Published by Elsevier B.V.
π SIMILAR VOLUMES
This letter presents the design of a monolithic pixel sensor with 10 Γ 10 mm 2 pixels in OKI 0:15 mm fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1:35 GeV e Γ beam at the LBNL ALS.
A new concept for monolithic pixel detector with 100% fill-factor is presented. The detection is based on the charge collection in the depleted zone of the reverse biased diode. Complex pixel electronics, including charge sensitive amplifier, amplitude discriminator and digital storage element is pl