A compact charge-signal processing chain, composed of a two-stage semi-Gaussian preamplifier-signal shaping filter, a discriminator and a binary counter, implemented in a prototype pixel detector using 0.20 mm CMOS silicon-on-insulator process, is presented. The gain of the analog chain was measured
Technology development for SOI monolithic pixel detectors
β Scribed by J. Marczewski; K. Domanski; P. Grabiec; M. Grodner; B. Jaroszewicz; A. Kociubinski; K. Kucharski; D. Tomaszewski; M. Caccia; W. Kucewicz; H. Niemiec
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 514 KB
- Volume
- 560
- Category
- Article
- ISSN
- 0168-9002
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This letter presents the design of a monolithic pixel sensor with 10 Γ 10 mm 2 pixels in OKI 0:15 mm fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1:35 GeV e Γ beam at the LBNL ALS.
A large monolithic particle pixel-detector implemented as system on a chip in a high-voltage 0:35 mm CMOS technology will be presented. The detector uses high-voltage n-well/p-substrate diodes as pixelsensors. The diodes can be reversely biased with more than 60 V. In this way, depleted zones of abo