## Abstract The growth of ultra‐thin Ta‐N films using atomic layer deposition (ALD) is investigated by in‐situ X‐ray photoelectron spectroscopy (XPS) starting from the first precursor pulse, as precursor substances __tert__‐butylimido‐tris(diethylamido)tantalum (TBTDET) and __tert__‐butylimido‐bis(
✦ LIBER ✦
Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition
✍ Scribed by Manjunath Puttaswamy; Kenneth Brian Haugshøj; Dr. Leif Højslet Christensen; Prof. Dr. Peter Kingshott
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 681 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0947-6539
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## Abstract Atomic layer deposition (ALD) at 100 °C provides a conformal coating on woven cotton with a tortuous and complex surfaces. The woven structures are completely preserved and replicated with thin coating of Al~2~O~3~, even after removing the cotton templates. The replicated woven structur