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Molecular Chemistry for Electronics || Metal Alkoxides as Precursors for Thin-Film Growth [and Discussion]

✍ Scribed by D. C. Bradley and J. M. Thomas

Book ID
123645390
Publisher
The Royal Society
Year
1990
Tongue
English
Weight
162 KB
Volume
330
Category
Article
ISSN
0264-3952

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tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage