Chemistry of Metal Thio- and Selenocarboxylates: Precursors for Metal Sulfide/Selenide Materials, Thin Films, and Nanocrystals
β Scribed by Jagadese J. Vittal; Meng Tack Ng
- Publisher
- John Wiley and Sons
- Year
- 2007
- Weight
- 11 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0931-7597
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π SIMILAR VOLUMES
tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage
cm 3 in comparison to 1.8 g/cm 3 obtained for SiBCN 3 synthesized by polymer pyrolysis. High hardness values up to 22 GPa are found, which might be further increased by reducing the residual hydrogen content by applying higher bias potentials or by reduced precursor flow. ## Experimental The expe
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