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Molecular beam study on scattering and sticking of molecular oxygen at Si(100)

✍ Scribed by T. Miyake; S. Soeki; H. Kato; T. Nakamura; A. Namiki; H. Kamba; T. Suzaki


Book ID
118364148
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
743 KB
Volume
242
Category
Article
ISSN
0039-6028

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GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob