✦ LIBER ✦

Molecular beam epitaxy grown PbSnTe buried quantum-well diode lasers with PbEuSeTe confinement layers

✍ Scribed by Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

Book ID: 114534757
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 136 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.158705

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Molecular beam epitaxy-grown PbSnTe-PbEu

Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers

✍ Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 258 KB

Molecular beam epitaxy-grown separate co

Molecular beam epitaxy-grown separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers

✍ Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 246 KB

InGaN multiple quantum well laser diodes

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

✍ Hooper, S.E.; Kauer, M.; Bousquet, V.; Johnson, K.; Barnes, J.M.; Heffernan, J. 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 224 KB

Long-wavelength strained-layer InGaAs/Ga

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri

AlGaInAs/InP strained-layer quantum well

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

✍ P. Savolainen; M. Toivonen; S. Orsila; M. Saarinen; P. Melanen; V. Vilokkinen; M 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 185 KB

Quantum well lasers with InAs monolayers

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

✍ M.L. Dotor; J. Meléndez; P. Huertas; A. Mazuelas; M. Garriga; D. Golmayo; F. Bri 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 277 KB