Nitrides optoelectronic devices grown by
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Kauer, M. ;Bousquet, V. ;Hooper, S. E. ;Barnes, J. M. ;Windle, J. ;Tan, W. S. ;H
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Article
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2007
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John Wiley and Sons
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English
⚖ 183 KB
## Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, co