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Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications

✍ Scribed by V. Pačebutas; K. Bertulis; G. Aleksejenko; A. Krotkus


Book ID
106398094
Publisher
Springer US
Year
2008
Tongue
English
Weight
276 KB
Volume
20
Category
Article
ISSN
0957-4522

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## Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, co