Large-area plan-view sample preparation
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Howard, David J. ;Paine, David C. ;Sacks, Robert N.
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Article
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1991
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Wiley (John Wiley & Sons)
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English
⚖ 453 KB
👁 1 views
## Abstract We describe a method for plan‐view transmission electron microscopy (TEM) sample preparation that takes advantage of extreme etch‐rate selectivity in GaAs and AlAs in HF/H~2~O solutions. GaAs/In~x~Ga~1‐x~As/GaAs strained‐layer films (x = 0.05, 0.10, 0.19, 0.22) were chemically lifted of