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Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors

✍ Scribed by Hoke, William E. ;Kirchner, Amanda J. ;Mosca, John J. ;Resler, Daniel P. ;Kennedy, Theodore D. ;Holz, Michael ;Kerr, Amanda J. ;Collins, Steven R.

Book ID: 126926281
Publisher: AVS (American Vacuum Society)
Year: 2013
Tongue: English
Weight: 645 KB
Volume: 31
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.4769895

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