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Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures

โœ Scribed by Murphy, M. J.; Chu, K.; Wu, H.; Yeo, W.; Schaff, W. J.; Ambacher, O.; Smart, J.; Shealy, J. R.; Eastman, L. F.; Eustis, T. J.


Book ID
126920185
Publisher
AVS (American Vacuum Society)
Year
1999
Tongue
English
Weight
306 KB
Volume
17
Category
Article
ISSN
0734-211X

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Transport properties of the two-dimensio
โœ Pogosov, A. G. ;Budantsev, M. V. ;Lavrov, R. A. ;Mansurov, V. G. ;Nikitin, A. Yu ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 184 KB

## Abstract Transport properties of the twoโ€dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecularโ€beam epitaxy are experimentally investigated. Conventional Hall and Shubnikovโ€“de Haas measurements as well as investigations of quantum transport phenomena are reported. It