Raman scattering in InxGa1โxAs/GaAs supe
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M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi
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Article
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1993
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Elsevier Science
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English
โ 395 KB
The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt