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Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating

✍ Scribed by Li, Yongqing; Ren, Cong; Xiong, Peng; von Molnár, Stephan; Ohno, Yuzo; Ohno, Hideo

Book ID
115526246
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
582 KB
Volume
93
Category
Article
ISSN
0031-9007

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Nanoelectronic Y-branches with lengths of the branching section down to 70 nm were fabricated by high-resolution electron beam lithography and wet etching from modulation doped GaAs=AlGaAs heterostructures. For voltages V l and Vr applied to the left and right branch reservoirs of a symmetric, balli