Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices

✍ Scribed by S Reitzenstein; L Worschech; M Keßelring; A Forchel

• Book ID: 104427987
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 214 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00243-6

✦ Synopsis

Nanoelectronic Y-branches with lengths of the branching section down to 70 nm were fabricated by high-resolution electron beam lithography and wet etching from modulation doped GaAs=AlGaAs heterostructures. For voltages V l and Vr applied to the left and right branch reservoirs of a symmetric, ballistic Y-branch switch in push-pull fashion (i.e., V l = -Vr) a negative output voltage Vs was detected at the oating reservoir directly connected to the central stem.