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Modification of Al/Si interface and Schottky barrier height with chemical treatment

✍ Scribed by Zs.J. Horváth; M. Ádám; I. Szabó; M. Serényi; Vo Van Tuyen


Book ID
108417638
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
72 KB
Volume
190
Category
Article
ISSN
0169-4332

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Effects of chemical treatment on barrier
✍ M. Diale; F.D. Auret 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 193 KB

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples