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On the Barrier Height of Al/p-Si Schottky Diodes

✍ Scribed by Ioannou, D. E. ;Huang, Y. J. ;McLarty, P. K. ;Johnson, S. M.

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
160 KB
Volume
93
Category
Article
ISSN
0031-8965

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Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes
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We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and