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A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

✍ Scribed by Zhijun Qiu; Zhen Zhang; Ostling, M.; Shi-Li Zhang


Book ID
111642201
Publisher
IEEE
Year
2008
Tongue
English
Weight
599 KB
Volume
55
Category
Article
ISSN
0018-9383

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