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Modellization and numerical simulation for bulk crystal growth process

✍ Scribed by T. Duffar; C. Barat; J.-Ph. Nabot


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
359 KB
Volume
173
Category
Article
ISSN
0921-5093

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## Abstract Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three‐dimensional analysis was carried out to investigate temperature distribution and solid‐liquid interface shape of silicon for large‐scale integrated circuits and photovol