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Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape

✍ Scribed by Y. Masuda; A. Suzuki; Y. Mikawa; Y. Kagamitani; T. Ishiguro; C. Yokoyama; T. Tsukada

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 417 KB
Volume: 53
Category: Article
ISSN: 0017-9310
DOI: 10.1016/j.ijheatmasstransfer.2009.11.027

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