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On the sublimation growth of SiC bulk crystals: development of a numerical process model

✍ Scribed by Dieter Hofmann; Marcus Heinze; Albrecht Winnacker; Franz Durst; Lev Kadinski; Peter Kaufmann; Yuri Makarov; Michael Schäfer

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
444 KB
Volume
146
Category
Article
ISSN
0022-0248

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## Abstract Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three‐dimensional analysis was carried out to investigate temperature distribution and solid‐liquid interface shape of silicon for large‐scale integrated circuits and photovol