Modelling of the formation of TiSi2 in a nitrogen ambient
β Scribed by J.F. Jongste; F.E. Prins; G.C.A.M. Janssen; S. Radelaar
- Book ID
- 107925788
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 267 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0169-4332
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The formation of Ti silicides has been examined in flash memories with 0.25 mm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on th
Formation of C54 TiSi was investigated in cosputtered (Ti 1 Si) films with and without a TiN capping layer 2 following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti Si regardless if a 5 3 TiN overlayer was present. Free energy calculations indicate the preference of