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Modelling of power metal-oxide semiconductor field-effect transistor for the analysis of switching characteristics in half-bridge converters

โœ Scribed by Xu, S.; Liu, X.; Sun, W.


Book ID
114442549
Publisher
The Institution of Engineering and Technology
Year
2010
Tongue
English
Weight
821 KB
Volume
4
Category
Article
ISSN
1751-858X

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โœ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati