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Modelling of hot-carrier degradation and its application for analog design for reliability

✍ Scribed by Benoit Dubois; Jean-Baptiste Kammerer; Luc Hébrard; Francis Braun

Book ID
104051541
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
330 KB
Volume
40
Category
Article
ISSN
0026-2692

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The hot-carrier reliability, analog, and linearity characteristics of DMG ISE SON MOSFET have been discussed. The device reduces electron temperature by 35.85% in comparison to a non-dual material gate (DMG) architecture showing its self-heating resistant nature. The analog performance and linearity