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Modelling of dopant profiles modified by diffusing defects in polycrystalline silicon

✍ Scribed by Krimmel, E. F. ;Langfeld, R. ;Lutscii, A. G. K.

Book ID: 105378313
Publisher: John Wiley and Sons
Year: 1985
Tongue: English
Weight: 411 KB
Volume: 88
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210880217

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