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Modelling of aluminium plasma etch processes

✍ Scribed by Paul M.F. Colson


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
215 KB
Volume
13
Category
Article
ISSN
0167-9317

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Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua