𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling semiconductor devices by using Neuro Space Mapping

✍ Scribed by Mahdi Gordi Armaki; Seyed Ebrahim Hosseini; Mohamad Kazem Anvarifard


Book ID
108057089
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
584 KB
Volume
34
Category
Article
ISSN
0307-904X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Space-mapped neuro-fuzzy optimization fo
✍ J. Hinojosa; G. DomΓ©nech-Asensi πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 277 KB

## Abstract Four modeling methods of microwave devices using multiple neuro‐fuzzy inference systems (MANFIS) based on space‐mapping (SM) approach are presented. In contrast with previous works using conventional mathematical tools and artificial neural networks, the proposed SM‐based neuro‐fuzzy mo

Accurate modeling of microwave devices u
✍ Slawomir Koziel; John W. Bandler πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 974 KB

We present an accurate modeling technique that exploits standard space mapping (SM) as a trend function and the correction layer implemented with kriging. The kriging process allows us to efficiently utilize all available fine model data (not possible in the standard SM approach) and to obtain accur

Neuro-space mapping-based DC modeling fo
✍ Shoulin Li; Bo Han; Jiali Cheng; Jianjun Gao πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 439 KB

In this article, two approaches for modeling DC characteristics for MOSFET based on neuro-space mapping (SM) are proposed. The first approach makes use of classical neuro-SM technology, while the second combines neuro-SM with prior knowledge input and source difference method. The formulas for obtai

Bias-dependent small-signal modeling bas
✍ Shoulin Li; Jiali Cheng; Bo Han; Jianjun Gao πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 866 KB

In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our appr