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Modeling of very high concentration effects on impurity diffusion in semiconductors

✍ Scribed by E Antoncik

Publisher
Elsevier Science
Year
2001
Weight
173 KB
Volume
22
Category
Article
ISSN
0261-3069

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✦ Synopsis

The standard theory of dopant diffusion in semiconductors based on the reaction᎐diffusion equations is generalized to include 'many body effects' due to the presence of a very high concentration of immobile dopants. This new formulation makes it possible to calculate the concentration profiles of donorsracceptors, clusters, and precipitates, if any, both in silicon and semiconducting compounds in good agreement with the experiment. Moreover, it is possible to calculate the effective diffusion coefficient within the steady-state approximation. This approach has been used to calculate the explicit form of the effective diffusion coefficient in predoped semiconductors. Furthermore, simple analytical formulae are given for, respectively, dopant in-diffusion profiles and the maximum penetration depth.

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## Abstract In this paper, a model of the propagation delays in the interconnection lines on GaAs‐based very high‐speed integrated circuits is presented. The model includes the very high‐frequency effects, such as geometric dispersion, substrate losses, and conductor losses. The model is used to si