The temperature mobility degradation inf
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L.M. Camillo; J.A. Martino; E. Simoen; C. Claeys
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Article
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2006
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Elsevier Science
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English
โ 184 KB
The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 mm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (V ZTC ) is proposed in the linear and the saturation region. The in