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Modeling of SOI-MOS capacitors C-V behavior: partially- and fully-depleted cases

โœ Scribed by Ikraiam, F.A.; Beck, R.B.; Jakubowski, A.


Book ID
114537259
Publisher
IEEE
Year
1998
Tongue
English
Weight
164 KB
Volume
45
Category
Article
ISSN
0018-9383

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The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 mm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (V ZTC ) is proposed in the linear and the saturation region. The in