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[IEEE 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - Hsinchu, Taiwan (18-20 April 2001)] 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) - Investigation on ESD robustness of CMOS devices in a 1.8-V 0.15-μm partially-depleted SOI salicide CMOS technology

✍ Scribed by Ming-Dou Ker, ; Kei-Kang Hong, ; Tung-Yang Chen, ; Tang, H.; Huang, S.-C.; Chen, S.S.; Huang, C.-T.; Wang, M.-C.; Loh, Y.-T.

Book ID: 118036327
Publisher: IEEE
Year: 2001
Weight: 410 KB
Volume: 0
Category: Article
ISBN-13: 9780780364127
DOI: 10.1109/vtsa.2001.934478

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