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Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis

✍ Scribed by Wei Hua; Shu-De Yao; Dharshana Wijesundera; Xue-Mei Wang; Wei-Kan Chu; Michael Martin; Jesse Carter; Mark Hollander; Lin Shao


Book ID
108224440
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
517 KB
Volume
267
Category
Article
ISSN
0168-583X

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✍ GwenaΓ«lle Gachon; Michael Martin; Jesse Carter; Mark Hollander; Lin Shao πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 403 KB

Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced rad