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Modeling of indium diffusion and end-of-range defects in silicon using a kinetic Monte Carlo simulation

✍ Scribed by Noda, Taiji

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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Ab-initio study on parameter extraction

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Kinetic Monte Carlo simulation of facete

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Kinetic Monte-Carlo simulation of self-p

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Mechanism of Boron Diffusion in Silicon:

✍ Sadigh, Babak; Lenosky, Thomas J.; Theiss, Silva K.; Caturla, Maria-Jose; Diaz d 📂 Article 📅 1999 🏛 The American Physical Society 🌐 English ⚖ 64 KB

H+ and He+ ions used as a RBS probe of t

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