Roughening and facetting in lattice-mism
β
M. Djafari Rouhani; M. Sahlaoui; A.M. Gué; D. Estève
π
Article
π
1994
π
Elsevier Science
π
English
β 371 KB
The (100) heteroepitaxial growth of lattice-mismatched semiconductors is simulated by associating the Monte Carlo technique and the valence force field approximation used for the strain energy calculations. It is shown that V-shaped defects showing ( 111 ) facets are formed in the early stages of th