𝔖 Bobbio Scriptorium
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A simple model for the growth of polycrystalline Si using the kinetic Monte Carlo simulation

✍ Scribed by Levine, Steven W; Clancy, Paulette

Book ID
124068943
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
638 KB
Volume
8
Category
Article
ISSN
0965-0393

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Monte Carlo simulation of domain growth
Monte Carlo simulation of domain growth in the kinetic Ising model on the connection machine
✍ Jacques G. Amar; Francis Sullivan πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 962 KB

A fast multispin algorithm for the Monte Carlo simulation of the two-dimensional spin-exchange kinetic Ising model, previously described by Sullivan and Mountain and used by Amar Ct al. has been adapted for use on the Connection Machine and applied as a first test in a calculation of domain growth.