✦ LIBER ✦

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

✍ Scribed by Kentaro Kutsukake; Hideaki Ise; Yuki Tokumoto; Yutaka Ohno; Kazuo Nakajima; Ichiro Yonenaga

Book ID: 116630236
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 446 KB
Volume: 352
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.02.004

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of the furnace pressure on oxyge

Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process

✍ Ying-Yang Teng; Jyh-Chen Chen; Chung-Wei Lu; Hsueh-I Chen; Chuck Hsu; Chi-Yung C 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 759 KB

Oxygen and carbon incorporation during i

Oxygen and carbon incorporation during infra-red assisted Czochralski growth of silicon crystals

✍ U. Ekhult; T. Carlberg 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 795 KB

Kinetic model of growth and coalescence

Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals

✍ V. I. Talanin; I. E. Talanin 📂 Article 📅 2011 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 214 KB

SIMS investigations into the effect of g

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

✍ G. Parish; S. Keller; S. P. Denbaars; U. K. Mishra 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 299 KB

Incorporation behaviour of carbon and si

Incorporation behaviour of carbon and silicon on (100) and (111) surfaces during growth of GaAs/GaAs and Ga0.47In0.53As/InP by molecular beam epitaxy

✍ J.M. Schneider; J. Ziegler; H. Heinecke 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 445 KB

Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hal