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Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

โœ Scribed by Qi-Sheng Chen; Yan-Ni Jiang; Jun-Yi Yan; Wei Li; V. Prasad


Book ID
106518018
Publisher
Springer Netherlands
Year
2011
Tongue
English
Weight
331 KB
Volume
37
Category
Article
ISSN
0922-6168

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๐Ÿ“œ SIMILAR VOLUMES


Numerical simulation of ammonothermal gr
โœ Yan-Ni Jiang; Qi-Sheng Chen; V. Prasad ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 512 KB

Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonotherm

[Springer Series in Materials Science] T
โœ Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Springer Berlin Heidelberg ๐ŸŒ German โš– 773 KB

This Book Discusses The Important Technological Aspects Of The Growth Of Gan Single Crystals By Hvpe, Mocvd, Ammonothermal And Flux Methods For The Purpose Of Free-standing Gan Wafer Production.