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Modeling interface trapping effect in organic field-effect transistor under illumination

✍ Scribed by H. L. Kwok


Book ID
106029180
Publisher
Springer
Year
2008
Tongue
English
Weight
279 KB
Volume
94
Category
Article
ISSN
0721-7269

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Electrochemical Interface Doping in Orga
✍ A. Hepp; H. Heil; R. Schmechel; H. von Seggern πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 219 KB πŸ‘ 2 views

Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide