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Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

✍ Scribed by Michez, A.; Boch, J.; Dhombres, S.; Saigné, F.; Touboul, A.D.; Vaillé, J.-R.; Dusseau, L.; Lorfèvre, E.; Ecoffet, R.

No coin nor oath required. For personal study only.

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