✦ LIBER ✦

Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations

✍ Scribed by Xiao Sun, ; Vogiatzis, N.; Rorison, J. M.

Book ID: 120005780
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 377 KB
Volume: 19
Category: Article
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2013.2238895

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Dilute nitrides and 1.3 μm GaInNAs

Dilute nitrides and 1.3 μm GaInNAs quantum well lasers on GaAs

✍ S.M. Wang; H. Zhao; G. Adolfsson; Y.Q. Wei; Q.X. Zhao; J.S. Gustavsson; M. Sadeg 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 680 KB

Measurement of optical gain, effective g

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 μm dilute nitride double-quantum-well lasers

✍ MacKenzie, R.; Lim, J.J.; Bull, S.; Chao, S.; Sujecki, S.; Sadeghi, M.; Wang, S. 📂 Article 📅 2007 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 307 KB

Design criteria of 1.3-μm multiple-quant

Design criteria of 1.3-μm multiple-quantum-well lasers for high-temperature operation

✍ Yamamoto, N.; Seki, S.; Noguchi, Y.; Kondo, S. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 73 KB

Effects of well number in 1.3-μm GaInAsP

Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

✍ Namegaya, T.; Matsumoto, N.; Yamanaka, N.; Iwai, N.; Nakayama, H.; Kasukawa, A. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 661 KB

MOVPE growth of strained InAsP/InGaAsP q

MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers

✍ Yamamoto, M.; Yamamoto, N.; Nakano, J. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 804 KB

Barrier composition dependence of differ

Barrier composition dependence of differential gain and external differential quantum efficiency in 1.3-μm strained-layer multiquantum-well lasers

✍ Kito, M.; Otsuka, N.; Ishino, M.; Matsui, Y. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 608 KB