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MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers

✍ Scribed by Yamamoto, M.; Yamamoto, N.; Nakano, J.


Book ID
117867575
Publisher
IEEE
Year
1994
Tongue
English
Weight
804 KB
Volume
30
Category
Article
ISSN
0018-9197

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We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.